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| RF4C050AP pch -20v -10a middle power mosfet datasheet l l outline v dss -20 v huml2020l8 r ds(on) (max.) 26 m i d 10 a p d 2 w l l inner circuit l l features 1) low on - resistance. 2) high power small mold package (huml2020l8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. l l packaging specifications type packing embossed tape reel size (mm) 180 l l application tape width (mm) 8 switching basic ordering unit (pcs) 3000 load switch taping code tr marking sj l l absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss -20 v continuous drain current i d 10 a pulsed drain current i d,pulse *1 20 a gate - source voltage v gss 0 -8 v power dissipation p d *2 2 w junction temperature t j 150 range of storage temperature t stg -55 to + 150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20140312 - rev. 001
RF4C050AP datasheet thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *2 - 62.5 - /w electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0 v, i d = -1 ma -20 - - v breakdown voltage temperature coefficient v (br)dss i d = -1 ma - -9.3 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -20 v, v gs = 0 v - - -10 a gate - source leakage current i gss v gs = -8 v, v ds = 0 v - - -10 a gate threshold voltage v gs(th) v ds = -10 v, i d = -1 ma -0.3 - -1.0 v gate threshold voltage temperature coefficient v gs(th) i d = -1 ma - 1.8 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *3 v gs = -4.5 v, i d = -5.0 a - 18 26 m v gs = -2.5 v, i d = -2.5 a - 22 31 v gs = -1.8 v, i d = -2.5 a - 27 45 v gs = -1.5 v, i d = -1.0 a - 32 65 transconductance g fs *3 v ds = -10 v, i d = -5.0 a 8 - - s *1 pw Q 10 s, duty cycle Q 1% *2 mounted on 40mm40mm cu board *3 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20140312 - rev. 001 RF4C050AP datasheet electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0 v - 5500 - pf output capacitance c oss v ds = -10 v - 230 - reverse transfer capacitance c rss f = 1 mhz - 210 - turn - on delay time t d(on) *3 v dd ? -10 v,v gs = -4.5 v - 16 - ns rise time t r *3 i d = -2.5 a - 16 - turn - off delay time t d(off) *3 r l = 4.02 - 580 - fall time t f *3 r g = 10 - 160 - gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? -10 v, i d = -5.0 a v gs = -4.5 v - 55 - nc gate - source charge q gs *3 - 6.4 - gate - drain charge q gd *3 - 8.4 - body diode electirical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - -1.6 a body diode pulse current i sp *1 - - -20 forward voltage v sd *3 v gs = 0 v, i s = -1.6 a - - -1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20140312 - rev. 001 RF4C050AP datasheet electrical characteristic curves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20140312 - rev. 001 datasheet fig.5 typical output characteristics(i) fig.6 typical output characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 datasheet fig.9 gate threshold voltage vs. junction temperature fig.10 tranceconductance vs. drain current fig.11 drain current derating curve fig.12 static drain - source on - state resistance vs. gate source voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 datasheet fig.13 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 datasheet fig.17 static drain - source on - state resistance vs. drain current( ) fig.18 static drain - source on - state resistance vs. drain current( ) fig.19 typical capacitance vs. drain - source voltage fig.20 switching characteristics www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 datasheet fig.21 dynamic input characteristics fig.22 source current vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 RF4C050AP datasheet measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20140312 - rev. 001 RF4C050AP datasheet dimensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20140312 - rev. 001 |
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